Harnessing the base-pushout effect for ESD protection in bipolar and BiCMOS technologies

摘要

The impact of the base-pushout or Kirk-effect on the ESD characteristic of modern radio frequency (RF) NPN transistors is investigated. Due to the RF NPNs selectively implanted collector the onset of base-pushout is shifted to ESD relevant current levels, expressing itself in a characteristically high-ohmic breakdown mode after first snapback and a non-thermal second snapback, the so-called current mode snapback. Concepts to exploit the base-pushout effect for improved RF protection schemes are presented.