Microanalysis and electromigration reliability performance of high current transmission line pulse (TLP) stressed copper interconnects

摘要

Electrostatic discharge events can degrade the electromigration (EM) reliability of devices. Transmission line pulsing stress analysis is used to evaluate electrostatic discharge robustness of copper (Cu) interconnects and the impact to EM performance. Compelling evidence from transmission electron microscope data suggests the change in the micro-structure of the interconnects explains the creation of latent EM failures.