The radiation sensitivity mapping of ICs using an IR pulsed laser system

摘要

Recent results obtained with a pulsed nanosecond FR laser system to automatically test single event latch-up effects in laboratory are presented. In particular, the capabilities of this system to perform detailed mapping for ICs sensitivity to radiation are discussed. Two VLSI ASIC circuits were used for sensitivity mapping. The results are compared with those obtained in heavy ion tests at GSI (Darmstad, Germany).