Characterisation of series resistance degradation through charge pumping technique

摘要

The nature of hot carrier degradation in the spacer oxide of lightly doped drains n-MOSFETs is investigated. Damage in the spacer reveals a two-stage drain series resistance degradation with an early stage lasting about 100 ms for the technologies under consideration. Further a two-stage interface state generation separated by saturation between 1 and 10 s is observed for V_g = V_d stress condition. The co-relation between the charge pumping measurements and the drain series resistance for different stress condition is studied to investigate the nature of spacer damage. It is seen that under V_g ～ V_t and I_(submax) stress conditions, the damage is predominantly by interface state generation. Under V_g = V_d stress condition the damage can be attributed to both interface state generation and trapping.