Strength of Ta-Si interfaces by molecular dynamics

摘要

Miniaturization of electronic devices leads to nanoscale structures in the near future. In these length scales the technological choice for metalization and interconnect material seems to be copper mainly because of its low electrical resistance and resistivity against electromigration. In copper metalization a barrier layer between copper and silicon is needed to prevent diffusion. Tantalum seems to be the most common barrier metal. We use a modified embedded atom potential and molecular dynamics to study the energy, structure, and strength of Ta-Si interfaces. The interfacial energy has a negative correlation between the strength of the interface. We propose that mixing on the interface has an important role in interface strength.