Fabrication, characterisation and modelling of integrated on-silicon inductors

摘要

In this paper we present the design, fabrication and characterisation of passive inductors on a silicon substrate. These inductors were fabricated using a 10 μm minimum-feature CMOS process, with two aluminium layers and SiO_2 as the inter-level dielectric. Polygonal and circular inductors of four-and-a-half and seven-and-a-half turns were designed, fabricated and measured using a vector network analyser in the 40 MHz to 5 GHz range. Experimental results were compared to the predicted response of a simple equivalent electrical model. Compared to other reported inductors on silicon, the ones presented here show very good characteristics.