Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors

摘要

Low frequency (LF) noise can be used as a diagnostic technique to analyse the quality and reliability of electron devices. Different reviews of the fundamental and excess LF noise sources in compound semiconductor transistors have been published in previous papers. Examples of experimental correlation between LF noise and parasitic effects (i.e. electrical performance degradation) or failure mechanisms will be described for various compound semiconductor devices.