Standard and C-AFM tests to study the post-BD gate oxide conduction of MOS devices after current limited stresses

摘要

In this work, we have combined standard electrical tests with C-AFM experiments on SiO_2 gate oxides to investigate the influence of the nanometer scale conduction parameters (in particular, the area affected by the breakdown event, S_(BD)). to the overall oxide post-BD conduction, I_(BD), measured on microelectronic sized devices for a wide range of current limits. Although a relation between both parameters can be established, the results show that the total current flowing through the BD spot is mainly determined by the conductivity at the oxide position where it is initially triggered.