Experimental characterization of temperature distribution on Power MOS devices during Undamped Inductive Switching

摘要

In this paper we present experimental results of dynamic thermal mapping for the characterization of electrothermal behaviour of new power MOSFET devices during Undamped Inductive Switching. Based on a suitable electrical driving circuit and on a direct radiometric detection of the device temperature, the proposed system is able to acquire the temperature map over the dye area with high spatial (less than 10 μm) and time (less than 2μs) resolution, and good temperature (less than 1℃) resolution. This capabilities are confirmed by the results reported in the paper, where two different low voltage (less than 60V) low on-resistance (less than 10mΩ) multi-cellular power MOSFETs devices have been tested. Uneven temperature distributions due to differences in dye size and dissipated power have been detected during the UIS transient.