Characterization of self-heating effects in semiconductor resistors during transmission line pulses

摘要

The purpose of this work is the experimental extraction of the local average temperature occurring in silicon resistors when a transmission line pulse is applied. The local temperature is determined by combining transmission line pulses of different amplitude and at different ambient temperatures with three-dimensional electro-thermal simulation. The obtained calibration curves can be applied to convert the phase shift information as obtained by interferometric techniques (e.g. in Transient Interferometric Mapping) into absolute temperature readings.