2D Dopant Profiling on 4H Silicon Carbide P~+N Junction by Scanning Capacitance and Scanning Electron Microscopy

摘要

This paper proposes a comparison between a 2D dopant analysis of a 4H Silicon Carbide p~+n-junction carried out by Scanning Capacitance (SCM) and by Scanning Electron Microscopy (SEM). Two samples prepared both by cleaving and by polishing are investigated to quantify the impact of the surface roughness on the SCM signal. The properties of the native oxide grown on the SiC samples are characterized by the use of Conducting Atomic Force Microscopy and its suitability as a dielectric layer for SCM is discussed. The 1D-profiles, as extracted by SCM and SEM are finally compared with simulations and with Secondary Ion Mass Spectroscopy data.