Understanding the effects of NIR Laser Stimulation on NMOS transistor

摘要

NIR laser stimulation techniques allow localizing defects on integrated circuits from frontside and backside. At times, the understanding of signatures given by theses mapping techniques appears not easy. Their interpretations are often referenced from sample structures such as metal lines and p-n junction. A study of laser stimulation effect on elementary transistors seems to be necessary. This work presents a detailed investigation of thermal and photoelectrical laser influence on a single NMOS transistor. The main purpose is to understand and quantify NIR laser stimulation effects.