Localization of FET Device Performance with Thermal Laser Stimulation

摘要

Thermal Laser Stimulation (TLS) is applied for various localization techniques on metal interconnects, but it can also increase channel resistivity in FETs. quantitative measurements prove how this effect can be produced by laser beam absorption of free carriers in silicon. The light to heat conversion efficiency is much more in a metal interconnect though. It is demonstrated how TLS of a nearby interconnect by its heat diffusion to the FET can produce an even higher temperature shift in the channel area. The corresponding diffusion properties have been derived from the results.