Femtosecond Laser Ablation for Backside Silicon Thinning

摘要

Ultra-short pulse laser ablation has shown to be a promising technique for backside sample preparation. It is contact-less, non-thermal, precise, repetitive and adapted to the various type of material present in IC packages. In this paper we present the application of ultra-short pulse laser ablation to silicon thinning. Special care is taken to minimize the silicon RMS roughness to less than 1μm with a controlled depth.