Time dependent dielectric breakdown in a low-k interlevel dielectric

摘要

Intralevel Time Dependent Dielectric Breakdown (TDDB) was studied in interdigitated comb structures comprised of standard Cu metallization and a low-k interlevel dielectric. The failure distribution was found to be best represented as being lognormal with sigma increasing as the field decreased. Kinetic studies revealed an exponential dependence on the electric field that fits 1/E closer than -E, but is not compelling in either case. The data fits a simple impact damage model.