Long-term reliability of Ti-Pt-Au metallization system for Schottky contact and first-level metallization on SiC MESFET

摘要

The stability of metal layers on semiconductors is a key issue for the device electrical performances. Therefore, the reliability of SiC/Ti/Pt/Au system was investigated using storage steady-stress testing, AES (Auger Electron Spec-trometry), and SIMS (Secondary Ions Mass Spectrometry) analysis. The study was conducted on different patterns for gate and interconnection structure to underline the different reliability problems. Auger and SIMS analysis showed important modifications in the three-metal structure without reactions with the SiC substrate. The resistance degradation was assigned to interdiffusion phenomena. It was analyzed with a diffusion-controlled model. Activation energies and mean time to failure (MTF) were calculated for a failure criterion defined as a 10% increase of the resistance. Finally, the different rules of the metallization degradation in MESFET behaviours for interconnections and gate were discussed.