Temperature influence on energy losses in MOSFET capacitors

摘要

The paper deals with the investigation of energy dissipated during processes of charging and discharging of nonlinear MOSFET capacitors. The analysis concerns the CMOS circuits. The effect of simultaneous change of gate-to-source and drain-to-source voltages of one transistor is taken into account. The temperature influence on nonlinear MOSFET capacitors and energy gathered by them is also considered. The theoretical assessment is compared with HSPICE simulation results (BSIM3v3 model) for 0.35 μm technology.