Rigorous modeling of high-speed semiconductor devices

摘要

We present a review of industrial heterostructure devices based on SiGe/Si and Ⅲ-Ⅴ compound semiconductors analyzed by means of numerical simulation. A comparison of device simulators and current transport models is given and critical modeling issues are addressed. Results from two-dimensional hydrodynamic analyses of heterojunction bipolar transistors (HBTs) are presented in good agreement with measured data. The examples are chosen to demonstrate technologically relevant issues which can be addressed by device simulation.