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首页> 外文期刊>Microelectronics & Reliability >Layout Dependency Induced Deviation from Poisson Area Scaling in BEOL Dielectric Reliability
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Layout Dependency Induced Deviation from Poisson Area Scaling in BEOL Dielectric Reliability

机译:布局相关性导致BEOL介电可靠性偏离泊松面积缩放

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摘要

In this paper, the TDDB lifetime of sub-100 nm single damascene structures is investigated to check the validity of the classical Poisson area scaling for BEOL dielectric reliability. A parameter RLN (ratio of line length over number of turnings) is defined to quantify the layout critical area contribution to the BEOL dielectric breakdown lifetimes. Structures with different RLN's, metal materials and layouts are compared. It is found that for similar layouts with different RLN's, the TDDB lifetime will deviate from the Poisson area-scaling trend.
机译:在本文中,研究了亚100纳米以下单镶嵌结构的TDDB寿命,以检验经典Poisson面积换算对BEOL介电可靠性的有效性。定义参数RLN(线长与匝数之比)以量化布局关键区域对BEOL介电击穿寿命的贡献。比较具有不同RLN的结构,金属材料和布局。发现对于具有不同RLN的相似布局,TDDB寿命将偏离泊松面积缩放趋势。

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