Photon emission microscopy of inter/intra chip device performance variations

摘要

We propose a simple, noninvasive, optical technique to measure intra-wafer and intra-chip MOSFET performance variations. Technique utilizes correlation between device performance and weak near-infrared emission from its off-state current. It maps performance variations, producing quantitative data. We experimentally demonstrate our technique on 130 nm SOI microprocessor.