Dynamic stress-induced high-frequency noise degradations in nMOSFETs

摘要

Device parameter shifts in nMOSFETs subject to inverter-like dynamic voltage stress are examined experimentally. Model equations to relate high-frequency noise to device parameters are given. Dynamic stress-induced degradations in high-frequency noise performance of 0.16 μm nMOSFETs are investigated. Good agreement between the analytical predictions and experimental data is obtained. Noise performance of a Gilbert mixer is evaluated using Cadence SpectreRF simulation with the measured device model parameters.