Two-dimensional Dopant Profiling and Imaging of 4H Silicon Carbide Devices by Secondary Electron Potential Contrast

摘要

Recent publications reported a surprisingly intensive dopant contrast arising in Secondary Electron SEM images of Silicon Carbide devices. This work gives an insight into the physics of the contrast generation and discusses the proper experimental setup to be used for the quantitative two-dimensional delineation of bipolar and homojunctions in Silicon Carbide devices.