Modeling of NBTI saturation effect and its impact on electric field dependence of the lifetime

摘要

Negative Bias Temperature Instability of pMOSFETs is investigated under various stress gate voltages and temperatures. It is shown that degradation tends to saturate and the dependence of lifetime on electric field (E_(ox)) is expressed as a power-law of E_(ox). We propose new empirical and kinetic models. The E_(ox) dependence of the lifetime described by the power-law is derived from our empirical model describing the saturation of degradation. Moreover, our kinetic model explains the saturation behavior.