Multi-vibrational hydrogen release: Physical origin of T_(bd),Q_(bd) power-law voltage dependence of oxide breakdown in ultra-thin gate oxides

摘要

In this work we report an experimental observation of the current dependence on the defect generation probability driving to breakdown. We propose the MVHR model (multi-vibrational hydrogen release) based on the multi-vibrational excitation of the Si-H bond stretching mode. By this way we explain the power-law dependence of charge and time to breakdown and highlight its limit on PMOS inversion.