Descrambling and data reading techniques for Flash-EEPROM memories. Application to smart cards

摘要

The retention, reliability and security of data stored in Non Volatile Memories (NVM) are problems of utmost importance for the microelectronics industry. All these issues could be addressed by physically reading the memory content. A method to deduce memory organization and then to read data in Flash-EEPROM devices is presented. It is based on failure analysis techniques such as Focused Ion Beam (FIB), Scanning Kelvin Probe Microscopy (SKPM) and Scanning Capacitance Microscopy (SCM). An application is demonstrated on the Flash memory of a Programmable Integrated Circuit (PIC) from Microchip dedicated to smart card applications.