AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements

摘要

Although impressive results have been published for GaN-based transistors in a large frequency range reliability demonstration is becoming an important subject of concern. In this article the conditions of a long term DC life test is presented and a detailed description of pre- and post-test characterization by means of Low Frequency Noise measurements (LFN) is discussed. The transistor parameters (I_(DSS), R_(on), V_p) and the drain noise spectra presented an evolution strictly related to the biasing point during the stress. This demonstrates that LFN measurement is a useful tool to investigate degradation in GaN HEMTs.