Gate oxide failures due to anomalous stress from HBM ESD testers

摘要

An unexpected and serious effect from the ESD HBM tester causing gate oxide failure in input buffers is reported in this paper. The most significant finding is that this unwarranted stress comes from the tester relay and gives rise to false HBM evaluation. In this paper we investigate this new effect on gate oxide reliability and establish the safe control limits for proper output of the state-of-the-art ESD simulator waveforms.