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Historical review of compound semiconductor reliability

机译:复合半导体可靠性的历史回顾

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摘要

This discussion is meant to look back at reliability progress over the last thirty years and identify trends and shortcomings. The main body of published work came from the ROCS workshop. While the workshop addresses various specific issues individually, it is the accumulation of a variety of data, information, and experience which forms the basis of an assessment of reliability. In the end, reliability is simply an insightful perception of facts and statistics. After 20-years of workshop meetings and three decades of accumulation of compound semiconductor reliability information, it is time to review, compare, and discuss the progress and the future of reliability for compound semiconductors.
机译:该讨论旨在回顾过去三十年来的可靠性进步,并确定趋势和缺点。已发表作品的主体来自ROCS研讨会。尽管研讨会分别讨论了各种具体问题,但积累的各种数据,信息和经验却构成了可靠性评估的基础。最后,可靠性仅仅是对事实和统计数据的深刻洞察。经过20年的研讨会和三十年的化合物半导体可靠性信息积累,现在是时候回顾,比较和讨论化合物半导体可靠性的进展和未来了。

著录项

  • 来源
    《Microelectronics & Reliability 》 |2006年第8期| p.1218-1227| 共10页
  • 作者

    William J. Roesch;

  • 作者单位

    TriQuint Semiconductor, Inc., 2300 N.E. Brookwood Parkway, Hillsboro, OR 97124-5300, United States;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 一般性问题 ;
  • 关键词

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