Wear out failure mechanisms in aluminium and gold based LDMOS RF power applications

摘要

In this paper we will compare the electromigration and hot carrier properties of the old (gold based) and new (aluminium based) metallisation schemes as used in RF base station power amplifiers manufactured by Philips Semiconductors. We will show that the latest generation shows excellent reliability performance while the RF performance has been strongly enhanced. This has been obtained by optimizing the process and device architecture. Both results of electromigration measurements on test structures and electromigration degradation of full devices will be shown. It is concluded that the latest generation LDMOS RF amplifiers shows excellent RF and reliability performance while using an aluminium based metallisation scheme.