PMOS NBTI-induced circuit mismatch in advanced technologies

摘要

PMOS transistor degradation due to negative bias temperature instability (NBTI) has proven to be a significant concern to present CMOS technologies. This is of particular importance for analog applications where the ability to match device characteristics to a high precision is critical. Analog circuits use larger than minimum device dimensions to minimize the effects of process variation, leaving PMOS NBTI as a possible performance limiter. This paper examines the effect of PMOS-NBTI induced mismatch on analog circuits in a 90 nm technology.