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3D failure analysis in depth profiles of sequentially made FIB cuts

机译:顺序制作的FIB切割深度剖面中的3D失效分析

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摘要

A new method of investigating structures below a surface in a dual beam microscope is presented. It comprises electrical measurements in depth profiles of sequential focused ion beam (FIB) cuts by the use of two or more nanomanipulators with plugged in probe needles. The sample is oriented such that the structures are observed with the electron beam while they are cut free with the FIB. The nanomanipulators are moved to contact the structures for examination. The FIBcut is extended step by step, and after each cut the nanomanipulators are repositioned and measurements of the new structures that appear in the FIB cut are made. The measurement series provide a three dimensional electrical characterization of the examined sample volume.
机译:提出了一种在双光束显微镜中研究表面以下结构的新方法。它包括通过使用两个或更多个插入探针的纳米操纵器对连续聚焦离子束(FIB)切割的深度剖面进行电测量。对样品进行定向,以便在用FIB切割掉电子束的同时用电子束观察其结构。纳米操纵器被移动以接触结构以进行检查。 FIBcut逐步扩展,并且在每次切割后重新定位纳米操纵器,并对FIB切割中出现的新结构进行测量。测量系列提供了所检查样品体积的三维电特性。

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