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Study of a failure mechanism during UIS switching of planar PT-IGBT with current sense cell

机译:带有电流感应单元的平面PT-IGBT的UIS切换过程中的故障机理研究

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摘要

IGBT with sense emitter cells are used in power applications where current sensing or feedback is needed to guarantee safe operation of the switching device. In this paper we show, by experimental measurements and simulations, how the coupling of undesired voltages to the sense cell that is disconnected from the main IGBT emitter is able to trigger the latch-up of the entire device during inductive switching leading to its failure. Being able to reproduce the failure phenomenon by 2D simulations we are able to identify the possible physical cause of this phenomenon.
机译:带有感应发射器单元的IGBT用于需要电流感应或反馈以确保开关设备安全运行的电源应用。在本文中,我们通过实验测量和模拟表明,不希望有的电压耦合到与主IGBT发射极断开的感测单元如何能够在感应开关期间触发整个设备的闩锁,从而导致其故障。能够通过2D模拟重现故障现象,我们能够确定该现象的可能物理原因。

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