Trench IGBT failure mechanisms evolution with temperature and gate resistance under various short-circuit conditions

摘要

Two extreme configurations under short-circuit conditions leading to the punch through trench IGBT failure under the effect of the temperature and the gate resistance have been studied. By analyzing internal physical parameters, it was highlighted that the elevation of the temperature causes an acceleration of the failure which is due to a thermal runaway phenomenon, whereas the influence of the gate resistance on the failure evolution is minimal.