Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs

摘要

The effects of intermittent low-bias annealing on NBT stress-induced threshold voltage shifts in p-channel VDMOSFETs are analysed in terms of mechanisms responsible for underlying changes in the densities of gate oxide-trapped charge and interface traps. Negative bias annealing after an initial NBT stress appears to freeze the initial degradation. Alternatively, either positive or zero bias removes the portion of stress-generated oxide-trapped charge and creates new reversible component of interface traps, while each repeated NBT stress regenerates the oxide-trapped charge and removes the reversible component of interface traps. The post-stress generation of interface traps under positive oxide field is ascribed to the processes at SiO_2/Si interface arising from the reversed drift direction of positively charged species, which are not likely to occur under negative gate bias. Despite all these phenomena, intermittent annealing does not seem to affect the device lifetime.