Lifetime modeling of intrinsic gate oxide breakdown at high temperature

摘要

High resolution time-dependent dielectric breakdown tests are carried out on 7.2 nm gate oxide capacitors (n-type) in the electric field range 8.3-13.2 MV/cm at high temperatures (160-240 ℃). It is proven that even at these high temperatures log(t_(BD)) is proportional to 1/E_(OX) and the time-to-breakdown mechanism matches the anode hole injection (AHI) model (1/E_(OX)ox model). In addition it is presented that the TDDB activation energy E_a for this type of gate oxide has linear dependence on stress electric oxide field.