A study of the threshold-voltage suitability as an application-related reliability indicator for planar-gate non-punch-through IGBTs

摘要

This paper proposes an analysis of the stress level affecting non-punch-through IGBTs featuring different threshold-voltage values during their operation in inverter applications. Experimental results are interpreted and complemented by electro-thermal simulation, employing a partially self-developed transistor model. The outcome of this study is that the threshold-voltage value is a good performance and reliability indicator for transistors operated in parallel.