TLP Characterization of large gate width devices

摘要

The maximum transient voltage of a MOSFET device is one of the key parameters for power applications. Therefore, transmission line pulse (TLP) characterization is used to assess this. TLP measurements on large gate width devices are difficult to perform due to gate oscillations. In this paper, a method to avoid oscillation when measuring large gate width devices is presented. Device simulations are presented showing gate side oscillation triggered by the rising edge of the 100 ns TLP pulse. Adding a resistor in series with the gate largely damps the oscillation. Comparison between system level simulation and captured TLP waveforms is done and the correlation is discussed.