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Dynamic void formation in a DD-copper-structure with different metallization geometry

机译:具有不同金属化几何形状的DD-铜结构中的动态空隙形成

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In this study the degradation phenomena in dual-damascene copper (DD-Cu) metallizations will be investigated due to high current densities and substrate temperatures by finite element modeling. The static and dynamic simulations and calculations will show the suitability of the method in comparison to experimental results from the literature. Different geometry variations, like overlap and via height as well as a variation of the stress free temperature of the metallization will be carried out. It will be found, that if the maximum temperature in the metallization is near the stress free temperature the electromigration is dominant. If the temperatures differ from the stress free level stress migration will be predominant. Out of this it will be found that the knowledge of the stress free temperature in the metallization is very important for a sufficient migration determination.
机译:在这项研究中,将通过有限元建模研究由于高电流密度和衬底温度而导致的双大马士革铜(DD-Cu)金属化过程中的降解现象。与文献中的实验结果相比,静态和动态仿真与计算将显示该方法的适用性。将执行不同的几何变化,例如重叠和通孔高度,以及金属化的无应力温度变化。将发现,如果金属化中的最高温度接近无应力温度,则电迁移是主要的。如果温度不同于无应力水平,则应力迁移将占主导地位。由此可以发现,对于充分的迁移确定,了解金属化过程中的无应力温度非常重要。

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