Studies on solder bump electromigration in Cu/Sn-3Ag-0.5Cu/Cu system

摘要

This paper aims to understand the solder bump electromigration phenomenon in the Cu/Sn-3Ag-0.5Cu/Cu system. A temperature of 453 K with a current density of 10 kA/cm~2 was applied. A void nucleated at the highest current density point at the cathode. As the void grew along the cathode side, a solder depletion occurred on the opposite side of the electron entry point, resulting in an open failure. A unique purposely-designed 3D model simulation methodology provides a good understanding of the void nucleation and growth behavior. The temperature of the solder joint during the electromigration test was measured successfully by the resistance change in the junction line between the two joints.