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Influence of thermal contact resistance on thermal impedance of microelectronic structures

机译:热接触电阻对微电子结构热阻的影响

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摘要

The thermal impedance Z_(th)(jω) has been calculated numerically for a silicon chip glued on a ceramic substrate. The non perfect thermal contact is taken into account by modelling the chip-substrate interface as a thermal contact resistance r_c. If Z_(th) is represented as a Nyquist plot, mainly two circular arcs are observed. The high frequency arc is found to be almost independent from r_c, whereas the low frequency part is largely influenced by r_c. The thermal resistance R_(th) = Z_(th)(jω = 0) increases linearly with r_c, as known from the literature. Additionally, our simulations have shown that similar conclusions can be drawn for the real and imaginary part of Z_(th) at a fixed frequency ω ≠ 0.
机译:对于胶粘在陶瓷基板上的硅芯片,已经通过数值计算了热阻Z_(th)(jω)。通过将芯片-基板界面建模为热接触电阻r_c,可以考虑非完美的热接触。如果将Z_(th)表示为奈奎斯特图,则主要观察到两个圆弧。发现高频电弧几乎与r_c无关,而低频部分受r_c的影响很大。如从文献中已知的,热阻R_(th)= Z_(th)(jω= 0)随r_c线性增加。此外,我们的模拟结果表明,在固定频率ω≠0时,可以针对Z_(th)的实部和虚部得出相似的结论。

著录项

  • 来源
    《Microelectronics reliability》 |2007年第8期|1233-1238|共6页
  • 作者

    B. Vermeersch; G. De Mey;

  • 作者单位

    Ghent University, Department of Electronics and Information Systems (ELIS), Sint Pietersnieuwstraat 41, 9000 Gent, Belgium;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 一般性问题;
  • 关键词

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