Comparison between BSIM4.X and HSPICE flicker noise models in NMOS and PMOS transistors in all operating regions

摘要

In this paper, BSIM4.X and HSPICE flicker noise models are analytically examined and directly compared to noise measurements, using NMOS and PMOS devices fabricated in a 0.6 urn process by Austria Mikro Systeme (AMS). MOSFET 1/f noise measurements and the respective simulations were obtained under various bias conditions and in the entire flicker noise frequency bandwidth, as to study which flicker noise model is the optimum in each operating region. Comparisons suggest that in an NMOS transistor operating in the linear or saturation region, BSIM-Flicker model is accurate and therefore preferable. In a PMOS transistor, the most suitable model to describe its 1/f noise performance in the linear regime is also BSIM-Flicker, whereas SPICE-Flicker is more preferable in saturation. In NMOS transistors, the selected model provides an accurate description of the flicker noise, contrary to PMOS transistors, where simulation models appear to be unreliable and need further improvement.