Thermal heating within SOI

摘要

Heat diffuses from hot power devices to neighboring components such as bondpads, which shortens the lifetime of bond balls. SOI is a technology with advantages for integrated power applications. For this reason heat transport between components within one SOI die has been measured experimentally. The thermal time constants are determined. Inside an SOI transistor the heat propagates with 1 μm/μs typically until other time constants take over.