Statistical aspects of reliability in bulk MOSFETs with multiple defect states and random discrete dopants

摘要

We present a 3D statistical simulation study of the distribution of fractional current change and threshold voltage shift in an ensemble of realistic 35 nm bulk MOSFETs caused by charge trapping on stress generated defect states at the Si/SiO_2 interface, taking simultaneously into account random discrete dopant in the transistors and the statistically realistic distribution of traps. The role of strategically positioned defect states and their statistical distribution in generating 'anomalously' large current and threshold voltage change in devices with microscopically different discrete doping configurations is highlighted.