Simulation of migration effects in nanoscaled copper metallizations

摘要

The shrinking of copper interconnect dimensions for the 32 nm technology node and beyond leads to an increase of the interconnect material resistivity. Especially copper is described to have an increase of resistivity of about 50% at room temperature. For small interconnects aluminium or silver as metallization material might be considered due to better resistivity values than copper. In this investigation the migration effects in nanoscaled interconnects as well as the dynamic void formation for different interconnect materials are presented.