Investigation Of Charge Trapping/de-trapping Induced Operation Lifetime Degradation In Triple Superflash~r Memory Cell

摘要

In this paper, through triple SuperFlash~R cell, different results of high temperature operation lifetime (HTOL) after endurance cycling have been identified. Several factors affected this type device lifetime, including of program-erase cycling stress and bake procedure, are investigated. Due to special erase operation mode, a different behavior of charge trapping/de-trapping in triple SuperFlash~R cell has been observed and analyzed. The mechanism which induced various HTOL results could be explained by the combined effects of voltage acceleration and electrons trapping/de-trapping behaviors during bake.