Two-dimensional dopant profiling in semiconductor devices by electron holography and chemical etching delineation techniques with the same specimen

摘要

The electron holography and chemical etching delineation techniques were successfully employed to assess two-dimensional (2D) dopant profiles in semiconductor devices. The results obtained from both techniques with the same specimen were precisely compared and discussed in order to evaluate the performance limits of these techniques. It was demonstrated that both techniques are very effective in obtaining reliable 2D dopant profiles in nanodevice.