Editorial

摘要

This Special Section features five papers that were presented at the 2007 ROCS (Reliability Of Compound Semiconductors) Workshop, held in Portland, Oregon, on October 14, 2007.rnROCS, formerly known as the CaAs REL Workshop (Gallium Arsenide Reliability Workshop), was started in 1986 by the E1A (now the Electronics Industry Alliance) JEDEC JC-50 Committee on GaAs in the United States of America, to discuss GaAs reliability issues in an open forum. Through the years, attendance at this one-day workshop has included researchers from all parts of the world, featuring representatives from the manufacturing, user, and research communities. Papers based on "work in progress" are presented, as well as "mature" papers based on completed research, in a highly interactive environment. For the first few years, emphasis was on GaAs devices, but soon other types of compound semiconductor materials stepped in, and the workshop now has many other types of compound semiconductor device papers on the program, with a particular attention toward Ill-Nitride and wide-bandgap materials. In recognition of this trend, the workshop, now organized by the JEDEC JC-14.7 Committee on GaAs Reliability and Quality Standards, changed its name in 2004 and became ROCS, the Workshop on Reliability Of Compound Semiconductors.