3D Modeling of electromigration combined with thermal-mechanical effect for IC device and package

摘要

This paper studies the numerical simulation method for electromigration in IC device and solder joint in a package under the combination of high current density, thermal load and mechanical load. The three dimensional electromigration finite element model for IC device/interconnects and solder joint reliability are developed and tested. Numerical experiment is carried out to obtain the electrical, thermal and stress fields with the migration failure under high current density loads. The direct coupled analysis and indirect coupled analysis that include electrical, thermal and stress fields are investigated and discussed. The viscoplastic ANAND constitutive material model with both SnPb and SnAgCu lead-free solder materials is considered in the paper. An IC device is studied to show the modeling methodology and the comparison with previous test data. A global CSP package with PCB is modeled using relative coarse elements. In order to reduce the computational costs and to improve the calculation accuracy, a refined mesh submodel is constructed. The sub-model technique is studied in a direct and indirect coupled multiple fields. The comparison of voids generation through numerical example in this paper and previous experimental result is given.