Degradation of n-channel a-Si:H/nc-Si:H bilayer thin-film transistors under DC electrical stress

摘要

Bottom-gated n-channel thin-film transistors (TFTs) were fabricated, using as channel material hydrogenated amorphous silicon (a-Si:H)/nanocrystalline silicon (nc-Si:H) bilayers, deposited at 230 ℃ by plasma-enhanced chemical vapor deposition, and SiN_x as gate dielectric. The stability of these devices is investigated under three bias stress conditions: (ⅰ) gate bias stress (V_G = 25 V, V_D = 0), (ⅱ) on-state bias stress (V_G = 25 V, V_D = 20 V) and (ⅲ) off-state bias stress (V_G = -25 V, V_D = 20 V). It is found that the TFT degradation mechanisms are strongly dependent on the bias stress conditions, involving generation of deep and tail states in the active area of the channel material, carrier injection (electrons or holes) within the gate insulator and generation of donor trap states at the gate insulator/channel interface. The common features and the differences observed in the degradation behaviour under the different bias stress conditions are discussed.