Suppression of Ge-O and Ge-N bonding at Ge-HfO_2 and Ge-TiO_2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices

摘要

A study of changes in nano-scale morphology of thin films of nano-crystalline transition metal (TM) elemental oxides, HfO_2 and TiO_2, on plasma-nitrided Ge(100) substrates, and Si(100) substrates with ultra-thin (～0.8 nm) plasma-nitrided Si suboxide, SiO